SI4416DY Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4416DY
N-channel enhancement mode field-effect transistor
03af21
50
ID
10V 5V 4.5V
(A)
4V
40
50
ID ^{VDS > ID x RDSon}
(A)
40
03af23
30
30
3.5 V
Tj = 150 ºC
20
20
25 ºC
10
VGS= 3 V
10
0
0
1
2
3 VDS (V) 4
0
0
1
2
3
4 VGS (V) 5
Fig 5. Output characteristic; drain current as
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristic: drain current as
function of gate-source voltage; typical values
0.05
03af22
2
RDSon Tj = 25 ºC
VGS = 4.5 V
a
(Ω)
0.04
1.6
03ad57
1.2
0.03
0.02
10 V
0.01
0
0
10
20
30
40 _{ID (A)} 50
0.8
0.4
0
-60
0
60
120 _{Tj (ºC)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------^R----^D----^S--^o---ⁿ-------
R
D S o n ( 25 ^°C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08299
Product data
Rev. 01 — 05 June 2001
© Philips Electronics N.V. 2001. All rights reserved.
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