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| SI4416DY Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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Philips Semiconductors
Si4416DY
N-channel enhancement mode ï¬eld-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed
Symbol Parameter
Conditions
Static characteristics
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VDS = VGS; Figure 9
VDS = 24 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 9 A; Figure 7 and 8
VGS = 4.5 V; ID = 7.3 A; Figure 7 and 8
gfs
forward transconductance
Qg(tot) total gate charge
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain (reverse) diode
VDS = 15 V; ID = 9 A; Figure 11
ID = 9 A; VDD = 15 V; VGS = 5 V; Figure 14
ID = 9 A; VDD = 15 V; VGS = 10 V; Figure 14
VDD = 15 V; RD = 15 â¦; VGS = 10 V; RG = 6 â¦
VSD
source-drain (diode forward) voltage IS = 2.3 A; VGS = 0 V; Figure 13
trr
reverse recovery time
IS = 2.3 A; dIS/dt = â100 A/µs; VGS = 0 V
Min Typ Max Unit
1ââV
â â 1 µA
â â 25 µA
â â 100 nA
â 14 18 mâ¦
â 21 28 mâ¦
â 22 â S
â 18 25 nC
â 30 40 nC
â 6 â nC
â 6 â nC
â 8 20 ns
â 10 20 ns
â 40 60 ns
30 45 ns
â 0.75 1.2 V
â 50 80 ns
9397 750 08299
Product data
Rev. 01 â 05 June 2001
© Philips Electronics N.V. 2001. All rights reserved.
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