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| RB520CS30L Datasheet, PDF (8/14 Pages) NXP Semiconductors – 100 mA low VF MEGA Schottky barrier rectifier | |||
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NXP Semiconductors
RB520CS30L
100 mA low VF MEGA Schottky barrier rectifier
0.15
(1)
IF(AV)
(A)
(2)
0.10
(3)
0.05
(4)
006aac543
0.00
0
25 50 75 100 125 150 175
Tsp (°C)
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of solder point temperature; typical values
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 12. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 9, 10 and 11 are
calculated according to the equations: IF(AV) = IM à δ with IM defined as peak current,
IRMS = IF(AV) at DC, and IRMS = IM à δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
RB520CS30L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 10 March 2011
© NXP B.V. 2011. All rights reserved.
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