RB520CS30L Datasheet, PDF (6/14 Pages) NXP Semiconductors – 100 mA low VF MEGA Schottky barrier rectifier

NXP Semiconductors
RB520CS30L
100 mA low V_F MEGA Schottky barrier rectifier
1
I_F
(A)
10^–1
(1)
(2)
10^–2
10^–3
(3) (4) (5)
006aac536
10^–4
0
0.2
0.4
0.6
0.8
V_F (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
20
C_d
(pF)
15
10^–3
I_R
(A)
10^–4
10^–5
10^–6
10^–7
10^–8
10^–9
10^–10
0
10
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 25 °C
(4) T_j = −40 °C
006aac537
(1)
(2)
(3)
(4)
20
30
V_R (V)
Fig 5. Reverse current as a function of reverse
voltage; typical values
006aac538
10
5
0
0
10
20
30
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
RB520CS30L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 March 2011
© NXP B.V. 2011. All rights reserved.
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