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RB520CS30L Datasheet, PDF (1/14 Pages) NXP Semiconductors – 100 mA low VF MEGA Schottky barrier rectifier | |||
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RB520CS30L
100 mA low VF MEGA Schottky barrier rectifier
Rev. 1 â 10 March 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
 Average forward current: IF(AV) ⤠100 mA
 Reverse voltage: VR ⤠30 V
 Low forward voltage: VF ⤠450 mV
 Low reverse current: IR ⤠0.5 μA
 AEC-Q101 qualified
 Leadless ultra small SMD plastic package
1.3 Applications
 Low current rectification
 High efficiency DC-to-DC conversion
 Switch Mode Power Supply (SMPS)
 Reverse polarity protection
 Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
IF(AV)
Quick reference data
Parameter
average forward current
IR
reverse current
VR
reverse voltage
VF
forward voltage
Conditions
square wave;
δ = 0.5; f = 20 kHz
Tamb ⤠135 °C
Tsp ⤠145 °C
VR = 10 V
IF = 10 mA
Min Typ Max Unit
[1] -
-
100 mA
-
-
100 mA
-
0.14 0.5 μA
-
-
30 V
[2] -
330 450 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp ⤠300 μs; δ ⤠0.02.
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