RB520CS30L Datasheet, PDF (5/14 Pages) NXP Semiconductors – 100 mA low VF MEGA Schottky barrier rectifier

NXP Semiconductors
RB520CS30L
100 mA low V_F MEGA Schottky barrier rectifier
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1 _0.05
0
0.02
0.01
006aac535
1
10^–5
10^–4
10^–3
10^–2
10^–1
1
10
10²
10³
t_p (s)
Ceramic PCB, Al₂O₃, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_F
forward voltage
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
I_R
reverse current
V_R = 10 V
C_d
diode capacitance
V_R = 1 V; f = 1 MHz
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Min
[1]
-
-
-
-
-
-
Typ Max Unit
210 -
mV
270 -
mV
330 450 mV
450 -
mV
0.14 0.5 μA
10
-
pF
RB520CS30L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 March 2011
© NXP B.V. 2011. All rights reserved.
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