PSMN7R6-60BS_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 60 V 7.8 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
30
4.5
5.0
R_DSon
(mΩ)
20
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5.5
10
6.0
V_GS (V) = 15 10.0 8.0
0
0
20
40
60
80
100
I_D (A)
10
V_GS
(V)
8
6
V_DS = 12 V
30 V
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48 V
4
2
0
0
10
20
30
40
50
Q_G (nC)
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate-source voltage as a function of gate
of drain current; typical values
charge; typical values
10⁴
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V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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C
(pF)
10³
10²
10^−2
10^−1
1
C_iss
C_oss
C_rss
10
10²
V_DS (V)
Fig 15. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN7R6-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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