PSMN7R6-60BS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 60 V 7.8 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
20
R_DSon
(mΩ)
16
12
8
4
0
0
003aad666
5
10
15
20
V_GS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Drain-source on-state resistance as a function Fig 10. Sub-threshold drain current as a function of
of gate-source voltage; typical values
gate-source voltage
5
V_GS(th)
(V)
4
3
2
1
003aad280
2.4
a
2
max
1.6
typ
1.2
min
0.8
0.4
003aad696
0
−60
0
60
120
180
T_j (°C)
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature
PSMN7R6-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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