PSMN7R6-60BS_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 60 V 7.8 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 30 V
Min Typ Max Unit
-
0.86 1.2 V
-
40.4 -
ns
-
56 -
nC
100
I_D
15
6.0
(A)
10
80
8.0
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5.5
60
5.0
40
20
V_GS (V) = 4.5
0
0
0.5
1
1.5
2
V_DS (V)
160
g_fs
(S)
120
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80
40
0
0
20
40
60
80
100
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
100
I_D
(A)
80
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4000
C
C_iss
(pF)
3000
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60
40
T_j = 175 °C
T_j = 25 °C
20
C_rss
2000
1000
0
0
2
4
V_GS (V) ⁶
0
0
5
10
15
20
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
function of gate-source voltage; typical values
PSMN7R6-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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