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PSMN7R6-60BS_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 60 V 7.8 m standard level MOSFET in D2PAK | |||
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PSMN7R6-60BS
N-channel 60 V 7.8 m⦠standard level MOSFET in D2PAK
Rev. 2 â 2 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
ï® High efficiency due to low switching
and conduction losses
ï® Suitable for standard level gate drive
sources
1.3 Applications
ï® DC-to-DC converters
ï® Load switching
ï® Motor control
ï® Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
ID
drain current
Ptot
total power dissipation
Tj
junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13; see Figure 9
VGS = 10 V; ID = 25 A; VDS = 30 V;
see Figure 15; see Figure 14
VGS = 10 V; ID = 25 A; VDS = 30 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 92 A;
Vsup ⤠100 V; RGS = 50 â¦; unclamped
Min Typ Max Unit
-
-
60 V
-
-
92 A
-
-
149 W
-55 -
175 °C
-
5.9 7.8 mâ¦
-
10.6 -
nC
-
38.7 -
nC
-
-
110 mJ
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