PSMN2R9-30MLC_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

NXP Semiconductors
PSMN2R9-30MLC
N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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10
V_GS
(V)
8
6
4
2
0
0
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6V
24 V
V_DS= 15 V
10
20
30 _{QG (nC)} 40
Fig 12. Gate charge waveform definitions
10⁴
C
(pF)
10³
10²
10^-1
1
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C_iss
C_oss
C_rss
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
75
I_S
(A)
60
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45
30
15
0
0
T_j = 150°C
0.3
0.6
T_j = 25 °C
0.9 _VSD(V) 1.2
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Source current as a function of source-drain
voltage; typical values
PSMN2R9-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
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