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| PSMN2R9-30MLC_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | |||
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NXP Semiconductors
PSMN2R9-30MLC
N-channel 30 V 2.95 m⦠logic level MOSFET in LFPAK33 using NextPower Technology
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
1
DC
10
003aaj716
tp =10 μ s
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 5
Min Typ Max Unit
-
1.44 1.65 K/W
10
003aaj717
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1 0.05
0.02
10-2
single shot
P
d = tp
T
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN2R9-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 15 June 2012
© NXP B.V. 2012. All rights reserved.
4 of 14
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