PSMN2R9-30MLC_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

NXP Semiconductors
PSMN2R9-30MLC
N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
240
g_fs
(S)
180
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120
60
0
0
15
30
45
60
75
I_D (A)
75
I_D
(A)
60
45
30
15
0
0
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T_j = 150 °C
1
2
T_j = 25 °C
3
4
V_GS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
20
2.8
R_DSon
(mΩ)
15
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3
10
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
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2
a
10V
1.5
V_GS=4.5V
1
5
3.5
4.5
V_GS (V) = 10
0
0
15
30
45
60
75
I_D (A)
0.5
0
-60
0
60
120
180
T_j (°C)
Fig 10. Drain-source on-state resistance as a function Fig 11. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PSMN2R9-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
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