PSMN2R0-30BL_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 30 V 2.1 m logic level MOSFET in D2PAK

NXP Semiconductors
PSMN2R0-30BL
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
3
VGS (th)
(V)
2
1
max
typ
min
003a a c982
0
-6 0
0
60
120
180
Tj (°C)
Fig 9. Sub-threshold drain current as a function of
gate-source voltage
5
R_DSon
(mΩ)
4
3
2
1
003aad250
3
3.5
4
5
V_GS (V) =10 V
Fig 10. Gate-source threshold voltage as a function of
junction temperature
2
a
03aa27
1.5
1
0.5
0
0
20
40
60
80
100
I_D (A)
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PSMN2R0-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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