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| PSMN2R0-30BL_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel 30 V 2.1 m logic level MOSFET in D2PAK | |||
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NXP Semiconductors
PSMN2R0-30BL
N-channel 30 V 2.1 m⦠logic level MOSFET in D2PAK
7. Characteristics
Table 7. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown voltage
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 11
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 11
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11
RG
gate resistance
Dynamic characteristics
f = 1 MHz
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 15 V; VGS = 10 V;
see Figure 13; see Figure 14
QGS
QGS(th)
QGS(th-pl)
gate-source charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
see Figure 13; see Figure 14
pre-threshold gate-source charge
post-threshold gate-source
charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau voltage
ID = 25 A; VDS = 25 V; see Figure 13;
see Figure 14
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 15 V; RL = 0.5 â¦; VGS = 4.5 V;
RG(ext) = 4.7 â¦
PSMN2R0-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 20 March 2012
Min Typ Max Unit
30 -
-
V
27 -
-
V
1.3 1.7 2.15 V
0.5 -
-
V
-
-
2.45 V
-
0.02 3
µA
-
-
70 µA
-
10
100 nA
-
10
100 nA
-
2.47 2.9 mâ¦
-
3.4 4
mâ¦
-
2.51 2.9 mâ¦
-
1.79 2.1 mâ¦
-
0.78 -
â¦
-
107 -
nC
-
117 -
nC
-
55
-
nC
-
17 -
nC
-
11
-
nC
-
6
-
nC
-
16 -
nC
-
2.6 -
V
-
6810 -
pF
-
1410 -
pF
-
650 -
pF
-
63
-
ns
-
125 -
ns
-
111 -
ns
-
59 -
ns
© NXP B.V. 2012. All rights reserved.
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