PSMN2R0-30BL_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 30 V 2.1 m logic level MOSFET in D2PAK

NXP Semiconductors
PSMN2R0-30BL
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
Table 7. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time
Q_r
recovered charge
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 15 V
Min Typ Max Unit
-
0.76 1.2 V
-
49
-
ns
-
66 -
nC
100
I_D
(A)
80 ¹⁰
60
5
4
3.5
3
40
20
0
0
0.5
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V_GS (V) =2.5 V
1
1.5
2
V_DS (V)
100
I_D
(A)
80
60
40
20
0
0
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T_j = 175 °C
25 °C
1
2
3
4
5
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
220
g_fs
(S)
165
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8
R_DSon
(mΩ)
6
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110
4
55
2
0
0
25
50
75
100
I_D (A)
0
0
5
10
15
V_GS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Drain source on-state resistance as a function
of gate-source voltage; typical values
PSMN2R0-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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