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PSMN013-100XS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) | |||
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NXP Semiconductors
PSMN013-100XS
N-channel 100V 13 m⦠standard level MOSFET in TO220F (SOT186A)
5
VGS(th)
(V)
4
3
2
1
0
â60
0
003aad280
max
typ
min
60
120
180
Tj (°C)
10â1
ID
(A)
10â2
10â3
10â4
10â5
10â6
0
03aa35
min typ max
2
4
6
VGS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
30
RDSon 4.6
(mΩ)
25
4.8
5.0
003aag611
5.5
3
a
2.5
20
2
6.0
15
1.5
10
VGS(V) = 10
1
003aag654
5
0.5
0
0
20
40
60
80 100 120
ID (A)
0
-60
0
60
120
180
Tj (°C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PSMN013-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 6 March 2012
© NXP B.V. 2012. All rights reserved.
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