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| PSMN013-100XS Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) | |||
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NXP Semiconductors
PSMN013-100XS
N-channel 100V 13 m⦠standard level MOSFET in TO220F (SOT186A)
Table 4. Limiting values â¦continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 35.2 A;
Vsup ⤠100 V; unclamped; RGS = 50 â¦;
see Figure 3
Min Max Unit
-
40.3 A
-
141 A
-
180 mJ
40
ID
(A)
30
20
10
003aag601
120
Pder
(%)
80
40
03aa16
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN013-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 6 March 2012
© NXP B.V. 2012. All rights reserved.
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