PSMN013-100XS Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)

NXP Semiconductors
PSMN013-100XS
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
mounting base; isolated
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT186A (TO-220F)
Table 3. Ordering information
Type number
Package
Name
PSMN013-100XS
TO-220F
4. Limiting values
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
I_DM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 25 °C; see Figure 1
V_GS = 10 V; T_mb = 100 °C; see Figure 1
pulsed; t_p ≤ 10 µs; T_mb = 25 °C;
see Figure 4
P_tot
T_stg
T_j
T_sld(M)
total power dissipation
storage temperature
junction temperature
peak soldering temperature
T_mb = 25 °C; see Figure 2
Min Max Unit
-
100 V
-
100 V
-20 20 V
-
35.2 A
-
24.9 A
-
141 A
-
48.4 W
-55 175 °C
-55 175 °C
-
260 °C
PSMN013-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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