PSMN013-100XS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)

NXP Semiconductors
PSMN013-100XS
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
Table 7. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 10 A; V_GS = 0 V; T_j = 25 °C;
see Figure 18
t_rr
reverse recovery time I_S = 10 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 50 V
120
I_D
(A)
100
V_GS(V) = 10
6.0 5.5
003aag606
80
5.0
60
4.8
40
4.6
20
4.4
4.2
0
0
1
2
3 _VDS(V) 4
25
R_DSon
(mΩ)
20
15
10
5
0
4
8
Min Typ Max Unit
-
0.8 1.2 V
-
52 -
ns
-
109 -
nC
003aag607
12
16 _VGS(V) 20
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
100
g_fs
(S)
80
003aag608
80
I_D
(A)
60
003aag610
60
40
40
20
20
T_j = 175 °C
T_j = 25 °C
0
0
20
40
60 _{ID (A)} 80
0
0
2
4
6
V_GS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN013-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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