PSMN004-60B Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
100
I_S
(A)
V_GS = 0 V
80
175 ºC
60
40
20
03ah86
T_j = 25 ºC
12
V_GS
(V)
10
8
6
I_D = 75 A
V_DD = 48 V
T_j = 25 ºC
4
2
03ah88
0
0.0
0.5
1.0 _{VSD (V)} 1.5
0
0
50
100
150
200
Q_G (nC)
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 75 A; V_DD = 48 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 09156
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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