PSMN004-60B Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
300
I_D
T_j = 25 ºC ^{7.5 V}
(A)
8V
10 V
200
20V
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7V
6.5 V
6V
100
0
0
5.5 V
5V
V_GS = 4.5 V
0.4
0.8
1.2
1.6
2
V_DS (V)
100
I_D
(A)
80
V_DS > I_D x R_DSon
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60
T_j = 175 ºC
40
20
25 ºC
0
0
1
2
3
4
5
6
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.015
R_DSon
(Ω)
0.01
5V
5.5 V
0.005
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T_j = 25 C
6V
6.5 V
2.4
a
1.8
1.2
0.6
!== &
V_GS = 20 V _{10 V}
0
0
100
8V 7V
200
I_D (A) 300
0
-60
0
60
120
180
Tj (°C)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09156
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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