PSMN004-60B Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-mb)
R_th(j-a)
thermal resistance from junction to mounting base Figure 4
thermal resistance from junction to ambient
SOT78
vertical in still air
SOT404
mounted on a printed circuit board;
minimum footprint
7.1 Transient thermal impedance
Min Typ Max Unit
- - 0.65 K/W
- - 60 K/W
- - 50 K/W
1
Z_th(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single pulse
10-3
10-6
10-5
10-4
10-3
10-2
03af48
P
δ
=
tp
T
10-1
tp
t
T
1
t_p (s) ¹⁰
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09156
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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