PSMN004-60B Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb ( C)
P_der
=
-------^P----^t--^o---^t-------
P
×
100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
I_D
(A)
Limit R_DSon = V_DS/I_D
102
10
120
I_der
(%)
100
03ah79
80
60
40
20
0
0
30
60
90 120 150 180
T_mb (ºC)
I_der
=
--------^I--^D---------
I
×
100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ah81
t_p = 10 µs
100 µs
1 ms
DC
10 ms
100 ms
1
1
10
V_DS (V) ¹⁰²
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09156
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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