PMPB10XNE_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – 20 V, single N-channel Trench MOSFET

NXP Semiconductors
PMPB10XNE
20 V, single N-channel Trench MOSFET
1.2
V_GS(th)
(V)
0.8
max
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10⁴
C
(pF)
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C_iss
10³
typ
0.4
C_oss
min
C_rss
0.0
-60
0
60
I_D = 0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10²
10^-1
1
f = 1 MHz; V_GS = 0 V
10
10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
4.5
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3
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V_GS
I_S
(V)
(A)
3.0
2
1.5
0.0
0
5
10
15
20
25
Q_G (nC)
I_D = 9 A; V_DS = 10 V; T_amb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
1
T_j = 150 °C
T_j = 25 °C
0
0.0
0.2
0.4
0.6
0.8
V_SD (V)
V_GS = 0 V
Fig. 15. Source current as a function of source-drain
voltage; typical values
PMPB10XNE
Product data sheet
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30 November 2012
© NXP B.V. 2012. All rights reserved
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