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PMPB10XNE_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 20 V, single N-channel Trench MOSFET
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NXP Semiconductors
PMPB10XNE
20 V, single N-channel Trench MOSFET
Symbol
RDSon
Parameter
drain-source on-state
resistance
gfs
forward
transconductance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 9 A; Tj = 25 °C
VGS = 4.5 V; ID = 9 A; Tj = 150 °C
VGS = 2.5 V; ID = 8 A; Tj = 25 °C
VGS = 1.8 V; ID = 3.7 A; Tj = 25 °C
VDS = 10 V; ID = 9 A; Tj = 25 °C
f = 1 MHz
VDS = 10 V; ID = 6 A; VGS = 4.5 V;
Tj = 25 °C
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 10 V; ID = 6 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = 2 A; VGS = 0 V; Tj = 25 °C
36
ID
(A)
24
4.5 V
2.5 V
12
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1.7 V
1.6 V
1.5 V
1.4 V
1.3 V
10-2
ID
(A)
10-3
10-4
10-5
Min Typ Max Unit
-
-
-10 µA
-
10
14
mΩ
-
15
21
mΩ
-
12
18
mΩ
-
16
25
mΩ
-
60
-
S
-
2
-
Ω
-
23
34
nC
-
2.6 -
nC
-
4.5 -
nC
-
2175 -
pF
-
235 -
pF
-
205 -
pF
-
13
-
ns
-
35
-
ns
-
54
-
ns
-
50
-
ns
-
0.6 1.2 V
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min
typ
max
0
0
1
Tj = 25 °C
VGS = 1.2 V
2
3
4
VDS (V)
10-6
0.0
0.4
Tj = 25 °C; VDS = 5 V
0.8
1.2
VGS (V)
Fig. 6.
PMPB10XNE
Output characteristics: drain current as a
Fig. 7. Subthreshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
30 November 2012
6 / 14
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