PMPB10XNE_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 20 V, single N-channel Trench MOSFET

NXP Semiconductors
PMPB10XNE
20 V, single N-channel Trench MOSFET
50
R_DSon
(mΩ)
40
1.4 V
30
017aaa899
1.6 V
1.8 V
1.7 V
1.9 V
50
R_DSon
(mΩ)
40
30
017aaa900
20
20
2.5 V
10
V_GS = 4.5 V
10
T_j = 150 °C
T_j = 25 °C
0
0
8
T_j = 25 °C
16
24
32
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
36
017aaa901
I_D
(A)
0
0
1
2
3
4
5
V_GS (V)
I_D = 9 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
1.6
a
017aaa902
1.4
24
1.2
1.0
12
T_j = 150 °C
T_j = 25 °C
0.8
0
0.0
0.5
1.0
V_DS > I_D × R_DSon
1.5
2.0
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
PMPB10XNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 November 2012
© NXP B.V. 2012. All rights reserved
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