PMPB10XNE_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – 20 V, single N-channel Trench MOSFET

NXP Semiconductors
PMPB10XNE
20 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
Graphic symbol
1
6
7
2
5
G
3
8
4
Transparent top view
DFN2020MD-6 (SOT1220)
D
S
017aaa255
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMPB10XNE
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1220
4. Marking
Table 4. Marking codes
Type number
PMPB10XNE
Marking code
1H
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
V_GS = 4.5 V; T_amb = 25 °C
[1]
V_GS = 4.5 V; T_amb = 100 °C
[1]
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
P_tot
total power dissipation
T_amb = 25 °C
[1]
PMPB10XNE
All information provided in this document is subject to legal disclaimers.
Product data sheet
30 November 2012
Min Max Unit
-
20
V
-12 12
V
-
12.9 A
-
9
A
-
5.7 A
-
36
A
-
1.7 W
© NXP B.V. 2012. All rights reserved
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