PMN28UN Datasheet, PDF (8/12 Pages) NXP Semiconductors – TrenchMOS™ ultra low level FET

Philips Semiconductors
PMN28UN
TrenchMOS™ ultra low level FET
20
IS
(A)
15
VGS = 0 V
03aj61
10
150 °C
Tj = 25 °C
5
5
VGS
(V)
4
ID = 3.8 A
Tj = 25 °C
VDD = 6 V
3
2
1
03aj68
0
0
0.5
1
1.5
VSD (V)
0
0
4
8
12
QG (nC)
T_j = 25 ° and 150 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 3.8 A; V_DD = 6 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 10191
Product data
Rev. 01 — 27 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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