PMN28UN Datasheet, PDF (6/12 Pages) NXP Semiconductors – TrenchMOS™ ultra low level FET

Philips Semiconductors
PMN28UN
TrenchMOS™ ultra low level FET
20
ID
(A)
15
4.5 V 2.5 V
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2V
1.8 V
20
ID
(A)
15
VDS > ID x RDSon
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10
10
1.6 V
5
1.4 V
VGS = 1.2 V
0
0
0.2
0.4
0.6
0.8
1
VDS (V)
5
Tj = 150 °C
25 °C
0
0
1
2
3
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aj59
60
2
RDSon ^{Tj = 25 °C 1.6 V VGS = 1.8 V}
2V
a
(mΩ)
1.5
40
2.5 V
1
4.5 V
20
0.5
03af18
0
0
5
10
15 _{ID (A)} 20
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10191
Product data
Rev. 01 — 27 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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