PMN28UN Datasheet, PDF (3/12 Pages) NXP Semiconductors – TrenchMOS™ ultra low level FET

Philips Semiconductors
PMN28UN
TrenchMOS™ ultra low level FET
120
Pder
(%)
80
03aa17
120
I _der
(%)
80
03aa25
40
40
0
0
50
100
150
200
Tsp (°C)
P_der = _P-------^P----^t--^o--^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
0
0
50
100
150
200
T_sp (°C)
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
102
ID
(A)
10
Limit RDSon = VDS / ID
1
DC
10-1
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
03aj66
10-2
10-3
10-1
1
10
102
VDS (V)
T_sp = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10191
Product data
Rev. 01 — 27 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3 of 12