 English |
|
|
|
|
|
|
|
| PMN28UN Datasheet, PDF (5/12 Pages) NXP Semiconductors – TrenchMOS™ ultra low level FET | |||
| |||
| ◁ |
Philips Semiconductors
PMN28UN
TrenchMOS⢠ultra low level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS
VDS = 10 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 2 A; Figure 7 and 8
VGS = 2.5 V; ID = 2 A; Figure 7 and 8
VGS = 1.8 V; ID = 1.5 A; Figure 7 and 8
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDD = 6 V; VGS = 4.5 V; ID = 3.8 A; Figure 13
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11
VDD = 6 V; RD = 5.6 â¦; VGS = 4.5 V; RG = 6 â¦
VSD
source-drain (diode forward) voltage IS = 1.7 A; VGS = 0 V; Figure 12
Min Typ Max Unit
12 -
-
V
0.4 0.7 -
V
-
0.01 1.0 µA
-
-
10 µA
-
10 100 nA
-
28 34 mâ¦
-
32 40 mâ¦
-
39 56 mâ¦
-
10.1 -
nC
-
1.8 -
nC
-
2.1 -
nC
-
740 -
pF
-
185 -
pF
-
125 -
pF
-
8-
ns
-
15 -
ns
-
53 -
ns
-
14 -
ns
-
0.8 1.2 V
9397 750 10191
Product data
Rev. 01 â 27 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5 of 12
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese