PMF280UN Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel UTrenchMOS ultra low level FET

Philips Semiconductors
PMF280UN
N-channel µTrenchMOS™ ultra low level FET
1
IS
VGS = 0 V
(A)
0.8
0.6
03an05
5
VGS
(V)
4
ID = 1 A
Tj = 25 °C
VDD = 10 V
3
03an07
0.4
2
150 °C
Tj = 25 °C
0.2
1
0
0
0.5
1
1.5
VSD (V)
0
0
0.2
0.4
0.6
0.8
1
QG (nC)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 1 A; V_DD = 10 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 12768
Product data
Rev. 01 — 27 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8 of 12