PMF280UN Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel UTrenchMOS ultra low level FET

Philips Semiconductors
PMF280UN
N-channel µTrenchMOS™ ultra low level FET
120
Pder
(%)
80
03aa17
120
Ider
(%)
80
03aa25
40
40
0
0
50
100
150
200
Tsp (°C)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
10
ID
(A)
1
Limit RDSon = VDS / ID
10-1
0
0
50
100
150
200
Tsp (°C)
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03an08
tp = 10 µ s
100 µ s
1 ms
DC
10 ms
100 ms
10-2
10-1
1
10
102
VDS (V)
T_sp = 25 °C; I_DM is single pulse; V_GS = 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12768
Product data
Rev. 01 — 27 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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