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| PMF280UN Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel UTrenchMOS ultra low level FET | |||
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Philips Semiconductors
PMF280UN
N-channel µTrenchMOS⢠ultra low level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 1 µA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
VGS(th) gate-source threshold voltage
ID = 0.25 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = â55 °C
IDSS
drain-source leakage current
IGSS
gate-source leakage current
VDS = 20 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±8 V; VDS = 0 V
RDSon drain-source on-state resistance
VGS = 4.5 V; ID = 0.2 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 2.5 V; ID = 0.1 A; Figure 7 and 8
VGS = 1.8 V; ID = 0.075 A; Figure 7 and 8
Dynamic characteristics
Qg(tot)
Qgs
total gate charge
gate-source charge
ID = 1 A; VDD = 10 V; VGS = 4.5 V;
Figure 13
Qgd
gate-drain (Miller) charge
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VGS = 0 V; VDS = 20 V; f = 1 MHz;
Figure 11
VDD = 10 V; RL = 10 â¦;
VGS = 4.5 V; RG = 6 â¦
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 0.3 A; VGS = 0 V; Figure 12
Min Typ Max Unit
20 -
-
V
18 -
-
V
0.45 0.7 1
V
0.25 -
-
V
-
-
1.2 V
-
-
1
µA
-
-
100 µA
-
10 100 nA
-
280 340 mâ¦
-
448 544 mâ¦
-
360 430 mâ¦
-
460 660 mâ¦
-
0.89 -
nC
-
0.13 -
nC
-
0.18 -
nC
-
45 -
pF
-
11 -
pF
-
7
-
pF
-
4.5 -
ns
-
10 -
ns
-
18.5 -
ns
-
5
-
ns
-
0.83 1.2 V
9397 750 12768
Product data
Rev. 01 â 27 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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