PMF280UN Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel UTrenchMOS ultra low level FET

Philips Semiconductors
PMF280UN
N-channel µTrenchMOS™ ultra low level FET
2.5
ID
(A)
2
1.5
1
4.5 V 3 V 2.5 V
03an02
2V
1.8 V
2.5
ID
(A)
2
VDS > ID x RDSon
25 °C
1.5
03an04
Tj = 150 °C
1
0.5
VGS = 1.5 V
0.5
0
0
0.5
1
1.5 _{VDS (V)} 2
0
0
1
2
3
4
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03an03
1
2
2V
RDSon
VGS = 1.8 V
(Ω)
a
0.8
1.5
0.6
2.5 V
1
0.4
3V
4.5 V
0.5
0.2
03af18
0
0
0.5
1
1.5
2 _{ID (A)} 2.5
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12768
Product data
Rev. 01 — 27 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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