PHX9NQ20T Datasheet, PDF (8/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX9NQ20T , PHF9NQ20T
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
E
E1
A
P
m
A1
q
D1
D
SOT186
L1
L
b1
L2
123
b
e
e1
wM
Q
c
0
5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c
D D1 E E1
e
e1
L L1⁽¹⁾ L2
mm
4.4
4.0
2.9
2.5
0.9
0.7
1.5 0.55 17.0 7.9 10.2
1.3 0.38 16.4 7.5 9.6
5.7
5.3
2.54
5.08
14.3
13.5
4.8
4.0
10
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
SOT186
TO-220
mP Q q w
0.9
0.5
3.2
3.0
1.4
1.2
4.4
4.0
0.4
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
November 2000
8
Rev 1.100