PHX9NQ20T Datasheet, PDF (5/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX9NQ20T , PHF9NQ20T
10 ^{Drain current, ID (A)}
9
8
7
6
5
4
150 C
3
2
1
0
0
1
2
3
4
Gate-source voltage, VGS (V)
Tj = 25 C
5
6
Fig.7. Typical transfer characteristics.
I_D = f(V_GS)
Transconductance, gfs (S)
14
13
12
11
10
9
Tj = 25 C
8
7
6
5
4
3
2
1
0
012345
ID / (A)
150 C
678
9 10
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
2.5 ^{Normalised On-state Resistance}
2
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160
Junction Temperature, Tj C
Fig.9. Normalised drain-source on-state resistance.
R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j)
4.5 ^{Threshold Voltage, VGS(TO) (V)}
4
3.5
3
2.5
2
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
Drain current, ID (A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
Ciss
Coss
100
10
0.1
1
10
Drain-Source Voltage, VDS (V)
Crss
100
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
November 2000
5
Rev 1.100