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| PHX9NQ20T Datasheet, PDF (3/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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Philips Semiconductors
N-channel TrenchMOSï transistor
Product specification
PHX9NQ20T , PHF9NQ20T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 9 A; VGS = 0 V
trr
Reverse recovery time
IF = 9 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
- 8.7 A
-
- 35 A
- 0.85 1.2 V
- 92 - ns
- 0.5 - µC
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all SOT186A package; f = 50-60 Hz;
three terminals to external
sinusoidal waveform; R.H. ⤠65%;
heatsink
clean and dustfree
Visol
Repetitive peak voltage from all SOT186 package; R.H. ⤠65%;
three terminals to external
clean and dustfree
heatsink
Cisol
Capacitance from pin 2 to
f = 1 MHz
external heatsink
MIN.
-
-
-
TYP.
10
MAX. UNIT
2500 V
1500 V
-
pF
November 2000
3
Rev 1.100
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