PHX9NQ20T Datasheet, PDF (4/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX9NQ20T , PHF9NQ20T
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); V_GS ≥ 10 V
Peak Pulsed Drain Current, IDM (A)
100
RDS(on) = VDS/ ID
10
tp = 10 us
100us
1
1 ms
D.C.
10 ms
100 ms
0.1
1
10
100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Transient thermal impedance, Zth j-a (K/W)
10
D = 0.5
0.2
1
0.1
0.05
0.02
0.1
single pulse
0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
10 ^{Drain Current, ID (A)}
Tj = 25 C
9
8
7
VGS = 10V
8V
6V
5.5 V
6
5
4
5V
3
2
4.5 V
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.5
0.45
4.5 V
5V
Tj = 25 C
0.4
0.35
0.3
5.5 V
0.25
6V
0.2
0.15
VGS = 10V
0.1
8V
0.05
0
0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D)
November 2000
4
Rev 1.100