PHX45NQ11T Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX45NQ11T
N-channel TrenchMOS™ standard level FET
50
ID _{VGS = 0 V}
(A)
40
30
20
175 °C
10
03ao85
Tj = 25 °C
15
VGS
(V)
ID = 45 A
Tj = 25 °C
10
VDD = 20 V
5
03ao87
80 V
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
20
40
60
80
QG (nC)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 45 A; V_DD = 20 V and 80 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
7. Isolation characteristics
Table 6: Isolation characteristics
Symbol Parameter
V_isol
RMS isolation voltage from all three
terminals to external heatsink.
C_isol
Capacitance from pin 2 (drain) to
external heatsink.
Conditions
f = 50-60 Hz; sinusoidal waveform;
RH ≤ 65%; clean and dust-free.
f = 1 MHz
Min. Typ. Max. Unit
-
-
2500 V
-
10 -
pF
9397 750 13181
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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