PHX45NQ11T Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX45NQ11T
N-channel TrenchMOS™ standard level FET
40
8V 6V
ID
VGS = 10 V
(A)
30
03ao82
Tj = 25 °C
50
ID _{VDS > ID x RDSon}
(A)
40
03ao84
20
5V
4.8 V
10
4.6 V
4.4 V
4.2 V
0
0
0.5
1
1.5
2
VDS (V)
30
20
10
0
0
175 °C
Tj = 25 °C
2
4 _{VGS (V)} 6
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.16
03ao83
3
4.2 V 4.4 V 4.6 V
RDSon
VGS = 4.8 V
(Ω)
a
Tj = 25 °C
0.12
5V
2
0.08
03aa29
1
0.04
6V
0
0
5
T_j = 25 °C
8V
10 V
10
15
20
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
T_j (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13181
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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