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| PHX45NQ11T Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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Philips Semiconductors
PHX45NQ11T
N-channel TrenchMOS⢠standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = â55 °C
IDSS
drain-source leakage current
IGSS
gate-source leakage current
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
Dynamic characteristics
Qg(tot)
Qgs
total gate charge
gate-source charge
ID = 45 A; VDD = 80 V; VGS = 10 V;
Figure 13
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
VDD = 50 V; RL = 1.8 â¦;
VGS = 10 V; RG = 5.6 â¦
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 20 A; dIS/dt = â100 A/µs; VGS = 0 V
Qr
recovered charge
Min Typ Max Unit
110 -
-
V
99 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
-
10 µA
-
-
100 µA
-
0.02 100 nA
-
22 25 mâ¦
-
-
68 mâ¦
-
61 -
nC
-
13 -
nC
-
25 -
nC
-
2600 -
pF
-
340 -
pF
-
195 -
pF
-
18 -
ns
-
72 -
ns
-
69 -
ns
-
58 -
ns
-
0.87 1.2 V
-
82 -
ns
-
260 -
nC
9397 750 13181
Product data
Rev. 01 â 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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