PHX45NQ11T Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX45NQ11T
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
R_th(j-h) thermal resistance from junction to heatsink
[1] External heatsink, connected to mounting base.
Conditions
Figure 4
5.1 Transient thermal impedance
Min Typ Max Unit
[1] _-
-
2
K/W
10
Zth(j-h)
(K/W)
1 ^{δ = 0.5}
0.2
0.1
10-1 ^0.05
0.02
10-2
10-5
single pulse
10-4
10-3
10-2
10-1
03ao78
P
δ=
tp
T
tp
T
1
tp (s)
t
10
Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse duration.
9397 750 13181
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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