PHX20N06T Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS™ standard level FET

Philips Semiconductors
PHX20N06T
N-channel TrenchMOS™ standard level FET
15
IS
(A)
VGS = 0 V
10
03am74
10
VGS
(V)
8
ID = 10 A
Tj = 25 °C
6
VDD = 14 V
03am76
44 V
4
5
150 °C
Tj = 25 °C
2
0
0
0.3
0.6
0.9 _{VSD (V)} 1.2
0
0
2
4
6
8
10
QG (nC)
V_GS = 0 V
Fig 12. Reverse diode current as a function of reverse
diode voltage; typical values.
I_D = 10 A; V_DD = 14 V and 44 V
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values.
7. Isolation characteristics
Table 6: Isolation characteristics
Symbol Parameter
V_(isol)RMS RMS isolation voltage from all three
terminals to external heatsink
C_(d-h)
Capacitance from drain to external
heatsink
Conditions
f = 50-60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust-free.
Min. Typ. Max. Unit
-
-
2500 V
-
10 -
pF
9397 750 12834
Product data
Rev. 01 — 16 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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