PHX20N06T Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS™ standard level FET

Philips Semiconductors
PHX20N06T
N-channel TrenchMOS™ standard level FET
15
ID
(A)
Tj = 25 °C
10
10 V 7 V 6.5 V
03am71
6V
5.8 V
5.4 V
15
VDS > ID x RDSon
ID
(A)
10
03am73
5V
5
4.6 V
VGS = 4.2 V
0
0
0.5
1
1.5 _{VDS (V)} 2
5
150 °C
Tj = 25 °C
0
0
2
4
6 _{VGS (V)} 8
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
100
RDSon
(mΩ)
75
Tj = 25 °C
50
03am72
VGS = 6 V
6.5 V
7V
10 V
2.4
a
1.8
1.2
03aa28
25
0.6
0
0
5
T_j = 25 °C
10 _{ID (A)} 15
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 12834
Product data
Rev. 01 — 16 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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