PHX20N06T Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS™ standard level FET

PHX20N06T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 16 February 2004
Product data
M3D308
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic
package using TrenchMOS™ technology.
1.2 Features
s Standard level compatible
s Isolated package.
1.3 Applications
s DC motor control
s DC-to-DC converters
s Synchronous rectification
s General purpose power switching.
1.4 Quick reference data
s V_DS ≤ 55 V
s P_tot ≤ 23 W
s I_D ≤ 12.9 A
s R_DSon ≤ 75 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT186A (TO-220F), simplified outline and symbol
Description
Simplified outline
gate (g)
mb
source (s)
drain (d)
mounting base;
isolated
Symbol
d
g
MBB076
s
1 2 3 _MBK110
SOT186A (TO-220F)