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PHX20N06T Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS™ standard level FET
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Philips Semiconductors
PHX20N06T
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 10 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 10 A; VDD = 44 V; VGS = 10 V; Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
VSD
source-drain (diode forward) voltage IS = 15 A; VGS = 0 V; Figure 12
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
VGS = −10 V; VDS = 30 V
Min Typ Max Unit
55 -
-
V
50 -
-
V
23
1.2 -
-
-
4V
-
V
4.4 V
-
0.05 10 µA
-
-
500 µA
-
2 100 nA
-
50 75 mΩ
-
75 138 mΩ
-
9.8 -
nC
-
2.2 -
nC
-
4.7 -
nC
-
320 -
pF
-
90 -
pF
-
60 -
pF
-
10 -
ns
-
50 -
ns
-
70 -
ns
-
40 -
ns
-
1.02 1.2 V
-
32 -
ns
-
120 -
nC
9397 750 12834
Product data
Rev. 01 — 16 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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