PHP82NQ03LT Datasheet, PDF (8/14 Pages) NXP Semiconductors – TrenchMOS™ logic level FET

Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
80
I_S ^VGS ^{= 0 V}
(A)
60
03ai59
40
20
0
0
175 ºC
0.4
T_j = 25 ºC
0.8
1.2
V_SD (V)
10
V_GS
(V)
8
I_D = 50 A
T_j = 25 ºC
V_DD = 15 V
6
03ai61
4
2
0
0
10
20
30 _{QG (nC)} 40
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 50 A; V_DD = 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 09308
Product data
Rev. 01 — 28 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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