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PHP82NQ03LT Datasheet, PDF (5/14 Pages) NXP Semiconductors – TrenchMOS™ logic level FET
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Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
30 -
-
V
27 -
-
V
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
1
1.9 2.5 V
0.6 -
-
V
-
-
2.9 V
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A; Figure 7 and 8
-
0.05 1 µA
-
-
500 µA
-
10 100 nA
-
8.3 10 mΩ
-
15 18 mΩ
-
6.3 8 mΩ
Dynamic characteristics
Qg(tot) total gate charge
ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13
-
16.7 -
nC
Qgs
gate-source charge
-
8-
nC
Qgd
gate-drain (Miller) charge
-
5-
nC
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
-
1620 -
pF
Coss
Crss
td(on)
output capacitance
reverse transfer capacitance
turn-on delay time
-
480 -
pF
-
165 -
pF
VDD = 15 V; ID = 25 A; VGS = 4.5 V; RG = 5.6 Ω -
20 -
ns
tr
rise time
-
78 -
ns
td(off)
turn-off delay time
-
30 -
ns
tf
fall time
-
24 -
ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
Qr
recovered charge
IS = 10 A; dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 25 V
-
0.9 1.2 V
-
32 -
ns
-
24 -
nC
9397 750 09308
Product data
Rev. 01 — 28 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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